Perhydropolysilazane Charge‐Trap Layer in Solution‐Processed Organic and Oxide Memory Thin‐Film Transistors-Reference-Cited by-同舟云学术

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Perhydropolysilazane Charge‐Trap Layer in Solution‐Processed Organic and Oxide Memory Thin‐Film Transistors

Published:2022-01-14 Issue:5 Volume:8 Page:2101079
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Boampong Amos Amoako¹,Lee Sang‐Hoon²,Lee Jonghee²,Choi Yoonseuk³,Kim Min‐Hoi²^ORCID

Affiliation:

1. Research Institute of Printed Electronics & 3D Printing Hanbat National University Yuseong‐gu Daejeon 34158 Republic of Korea

2. Department of Creative Convergence Engineering Hanbat National University Yuseong‐gu Daejeon 34158 Republic of Korea

3. Department of Electronic Engineering Hanbat National University Yuseong‐gu Daejeon 34158 Republic of Korea

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202101079

Reference41 articles.

1. Large-scale fabrication of all-inkjet-printed resistors and WORM memories on flexible polymer films with high yield and stability

2. Device Physics of Solution-Processed Organic Field-Effect Transistors

3. A soluble and air-stable organic semiconductor with high electron mobility

4. Solution-Processed Organic n-Type Thin-Film Transistors

5. A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Speed, Low-Voltage Programmable/Erasable Flexible Two-Bit Organic Transistor Nonvolatile Memories Based on Ultraviolet-Ozone Treated Terpolymer Ferroelectric Gate;IEEE Electron Device Letters;2024-02

2. Electrically Erasable Wide-Bandgap Charge-Trap Memory With an Electric-Flux-Modulating Counter Electrode;IEEE Electron Device Letters;2023-11

3. Solution-processed zirconium acetylacetonate charge-trap layer for multi-bit nonvolatile thin-film memory transistors;Science and Technology of Advanced Materials;2023-05-23

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