Electrically Erasable Wide-Bandgap Charge-Trap Memory With an Electric-Flux-Modulating Counter Electrode-Reference-Cited by-同舟云学术

Electrically Erasable Wide-Bandgap Charge-Trap Memory With an Electric-Flux-Modulating Counter Electrode

Published:2023-11 Issue:11 Volume:44 Page:1841-1844
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kim Hayoung¹,Boampong Amos A.²^ORCID,Kim Chang-Hyun³^ORCID,Kim Min-Hoi⁴^ORCID

Affiliation:

1. Creative Convergence Engineering Department, Hanbat National University, Daejeon, South Korea

2. Research Institute of Printed Electronics and 3D Printing, Industry University Cooperation, Hanbat National University, Daejeon, South Korea

3. School of Electronic Engineering, Gachon University, Seongnam, South Korea

4. Creative Convergence Engineering Department and the Research Institute of Printed Electronics and 3D Printing, Industry University Cooperation, Hanbat National University, Daejeon, South Korea

Funder

Basic Science Research Program through the National Research Foundation of Korea

Ministry of Education

Korea Government [Ministry of Science and ICT (MSIT)]

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10294238/10247031.pdf?arnumber=10247031

Reference26 articles.

1. Investigating the Reasons for the Difficult Erase Operation of a Charge‐Trap Flash Memory Device with Amorphous Oxide Semiconductor Thin‐Film Channel Layers

2. Process Optimization and Device Characterization of Nonvolatile Charge Trap Memory Transistors Using In–Ga–ZnO Thin Films as Both Charge Trap and Active Channel Layers

3. Perhydropolysilazane Charge‐Trap Layer in Solution‐Processed Organic and Oxide Memory Thin‐Film Transistors

4. High-Performance Light-Erasable Memory and Real-Time Ultraviolet Detector Based on Unannealed Indium–Gallium–Zinc–Oxide Thin-Film Transistor

5. Fabrication of InGaZnO Nonvolatile Memory Devices at Low Temperature of 150 °C for Applications in Flexible Memory Displays and Transparency Coating on Plastic Substrates