Radiation‐induced charge neutralization and interface‐trap buildup in metal‐oxide‐semiconductor devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345199
Reference26 articles.
1. Room Temperature Annealing of Ionizatton-Induced Damage in CMOS Circuits
2. Leakage Current Phenomena in Irradiated SOS Devices
3. The Effects of Test Conditions on MOS Radiation-Hardness Results
4. The Effect of Operating Frequency in the Radiation Induced Buildup of Trapped Holes and Interface States in MOS Devices
5. Growth and Annealing of Trapped Holes and Interface States Using Time-Dependent Biases
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