Selective area, synchrotron radiation induced, delta doping of silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350619
Reference12 articles.
1. Selective area deposition of boron on Si(111) induced by synchrotron radiation
2. Synchrotron‐radiation‐induced deposition of boron and boron carbide films from boranes and carboranes: Decaborane
3. Electronic structure of Si(111)-B(√3 × √3 )R30° studied by Si 2pand B 1score-level photoelectron spectroscopy
4. Silicon (2p) surface core‐level line shape of Si(111)–B
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4. Synchrotron-radiation-induced photodoping using disilane molecular-beam epitaxy: Low-temperature high doping of B;Journal of Applied Physics;1996
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