Electronic structure of Si(111)-B(√3 × √3 )R30° studied by Si 2pand B 1score-level photoelectron spectroscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.41.7694/fulltext
Reference14 articles.
1. Unoccupied surface states revealing the Si(111)√3 √3-Al, -Ga, and -In adatom geometries
2. Reflection high energy electron diffraction and Auger electron spectroscopic study on B/Si(111) surfaces
3. Formation of Si(111)-B and Si epitaxy on Si(111)-B: LEED-AES study
4. reconstruction along the (111) face of highly boron-doped Si upon vacuum annealing
5. Structure determination of the Si(111):B(√3×√3)R30° surface: Subsurface substitutional doping
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