Double-sided and single-sided polished 6H-SiC wafers with subsurface damage layer studied by Mueller matrix ellipsometry-Reference-Cited by-同舟云学术

Double-sided and single-sided polished 6H-SiC wafers with subsurface damage layer studied by Mueller matrix ellipsometry

Published:2020-12-21 Issue:23 Volume:128 Page:235304
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Li Huihui¹²,Cui Changcai¹²^ORCID,Bian Subiao¹²,Lu Jing¹²^ORCID,Xu Xipeng¹²,Arteaga Oriol³⁴^ORCID

Affiliation:

1. National and Local Joint Engineering Research Center for Intelligent Manufacturing Technology of Brittle Material Products, Huaqiao University, Xiamen 361021, China

2. Institute of Manufacturing Engineering, Huaqiao University, Xiamen 361021, China

3. Department de Física Aplicada, Feman Group, Universitat de Barcelona, Barcelona 08028, Spain

4. Institute of Nanoscience and Nanotechnology (IN2UB), Universitat de Barcelona, Barcelona 08028, Spain

Funder

Ministerio de Ciencia, Innovación y Universidades

Xiamen Municipal Bureau of Science and Technology

Huaqiao University

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0026124

Reference30 articles.

1. Interface formation of Al2O3 on carbon enriched 6H-SiC(0001): Photoelectron spectroscopy studies

2. Combining graphene with silicon carbide: synthesis and properties – a review

3. Dependence of Photoluminescence Emission on Excitation Power and Temperature in Highly Doped 6H- SiC

4. Anisotropy of absorption due to free electrons in 6H silicon carbide

5. Planarization mechanism for 6H–SiC (0001) Si-faced surfaces using electrochemical reactions

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3. Investigation of Surface Defects in Optical Components Based on Reflection Mueller Matrix Spectroscopy;Applied Sciences;2023-08-16

4. Application of imaging ellipsometry and white light interference microscopy for detection of defects in epitaxially grown 4H–SiC layers;Journal of the European Optical Society-Rapid Publications;2023

5. Identification of subsurface damage of 4H-SiC wafers by combining photo-chemical etching and molten-alkali etching;Journal of Semiconductors;2022-10-01