Anisotropy of absorption due to free electrons in 6H silicon carbide-Reference-Cited by-同舟云学术

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Anisotropy of absorption due to free electrons in 6H silicon carbide

Published:1965-06 Issue:6 Volume:3 Page:109-111
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Ellis B.,Moss T.S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference8 articles.

1. Proceedings of the International Conference on Semiconductors;Moss,1964

2. Exciton Recombination Radiation and Phonon Spectrum of6HSiC

3. Silicon Carbide;Spitzer,1960

4. Absorption freier Ladungsträger in α-SiC-Kristallen

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mueller Matrix Ellipsometric Characterization of Nanoscale Subsurface Damage of 4H-SiC Wafers: From Grinding to CMP;Frontiers in Physics;2022-02-14

2. Double-sided and single-sided polished 6H-SiC wafers with subsurface damage layer studied by Mueller matrix ellipsometry;Journal of Applied Physics;2020-12-21

3. Model-free determination of the birefringence and dichroism in c-cut crystals from transmission ellipsometry measurements;Applied Optics;2020-02-27

4. Anisotropy of free-carrier absorption and diffusivity in m-plane GaN;Applied Physics Letters;2012-01-09

5. Optical-absorption bands in the 1–3 eV range inn-type SiC polytypes;Physical Review B;1999-05-15

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