Photoluminescence study of InGaAs grown on InP by vapor phase epitaxy—Effects of O2injection and substrate orientation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95763
Reference10 articles.
1. V.P.E. GaAs m.e.s.f.e.t. structure using oxygen injection during buffer layer growth
2. The electrical properties of vapour epitaxial indium phosphide grown in the presence of oxygen
3. High- Purity inp grown by hydride vpe technique with impurity gettering by indium source and oxygen
4. Hydride multibarrel reactors suitable for microwave and optoelectronic (Ga, In)(As, P) heterostructure growth
5. Oxygen addition purification effect in InGaAs growth by hydride VPE
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1. Improvement of Heterointerface Properties of GaAs Solar Cells Grown With InGaP Layers by Hydride Vapor-Phase Epitaxy;IEEE Journal of Photovoltaics;2019-01
2. Fabrication of GaAs solar cells grown with InGaP layers by hydride vapor-phase epitaxy;Japanese Journal of Applied Physics;2018-07-05
3. Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications;Applied Physics Letters;2012-11-26
4. Time resolved photoluminescence study of strained-layer InGaAsP/InP heterostructures;Journal of Crystal Growth;1998-01
5. References;Thin Films by Chemical Vapour Deposition;1990
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