The electrical properties of vapour epitaxial indium phosphide grown in the presence of oxygen
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. The preparation of high purity epitaxial InP
2. Measurement of carrier-concentration profiles in epitaxial indium phosphide
3. A study of the molar fraction effect in the PCl3-In-H2 system
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Application of the Compatibility Relationship in Seeking a Functional Relationship among Species' Equilibrium Quantities in Complex Systems;The Journal of Physical Chemistry B;2000-09-20
2. Vapor Phase Epitaxy of Iii–V Semiconductors;Materials Processing: Theory and Practices;1989
3. Spectroscopic evidence that oxygen suppresses Si incorporation into vapor phase epitaxial InP;Applied Physics Letters;1987-05-11
4. Photoluminescence study of InGaAs grown on InP by vapor phase epitaxy—Effects of O2injection and substrate orientation;Applied Physics Letters;1985-06
5. High- Purity inp grown by hydride vpe technique with impurity gettering by indium source and oxygen;Journal of Electronic Materials;1983-09
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