Observation of semiconductor device channel strain using in-line high resolution X-ray diffraction-Reference-Cited by-同舟云学术

Observation of semiconductor device channel strain using in-line high resolution X-ray diffraction

Published:2013-10-21 Issue:15 Volume:114 Page:154502
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Holt Judson R.,Madan Anita,Harley Eric C. T.,Stoker Matt W.,Pinto Teresa,Schepis Dominic J.,Adam Thomas N.,Murray Conal E.,Bedell Stephen W.,Holt Martin

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4824819

Reference19 articles.

1. Piezoresistance Effect in Germanium and Silicon

2. Evaluation of piezoresistive coefficient variation in silicon stress sensors using a four-point bending test fixture

3. Effect of mechanical stress induced by etch-stop nitride: impact on deep-submicron transistor performance

4. Benefit of NMOS by Compressive SiN as Stress Memorization Technique and Its Mechanism

5. 22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL

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