Electronic states at the interface between thin films of ZnS and crystallinep‐silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339635
Reference12 articles.
1. DC electroluminescence in novel n-p Si/ZnS:Mn heterostructures
2. Electrical characteristics of Al/ZnS/p−n+ Si diode structures for electroluminescent devices
3. Heterojunctions of radio-frequency-sputtered thin films of ZnS and p-Si
4. The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
5. Rapid thermal annealing of Al‐Si contacts
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electronic and optical properties of (001) Si/ZnS heterostructures;Applied Physics Letters;1997-04-07
2. Study of the Si/ZnS Multilayer System for Optoelectronic Applications;MRS Proceedings;1997
3. Role of sulfur vacancies on the electrical characteristics of sputtered films of ZnS;Journal of Applied Physics;1995-11-15
4. Conductance technique measurements of the density of states between Si and ZnS grown by molecular beam epitaxy;Journal of Applied Physics;1993-07
5. Conductance technique measurements of the density of interface states between ZnS:Mn andp‐silicon;Journal of Applied Physics;1991-11
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