Conductance technique measurements of the density of interface states between ZnS:Mn andp‐silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349042
Reference30 articles.
1. DC electroluminescence in novel n-p Si/ZnS:Mn heterostructures
2. Electrical characteristics of Al/ZnS/p−n+ Si diode structures for electroluminescent devices
3. dc electroluminescence in copper‐free Zns:Mn thin films. I. Local destructive breakdown and its dependence on preparation and test conditions
4. dc electroluminescence in copper‐free ZnS:Mn thin films. II. A dielectric breakdown theory of instability
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