Time-resolved photoluminescence of quaternary AlInGaN-based multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1482415
Reference18 articles.
1. Light-Emitting Devices Based on Gallium Nitride and Related Compound Semiconductors
2. Shortest wavelength semiconductor laser diode
3. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
4. Characteristics of Ultraviolet Laser Diodes Composed of Quaternary AlxInyGa(1-x-y)N
5. Schottky barrier photodetector based on Mg‐dopedp‐type GaN films
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3. Thermal quenching of photoluminescence in Ga(AsBi);Journal of Applied Physics;2015-01-14
4. Enhanced carrier localization in near-ultraviolet multiple quantum wells using quaternary AlInGaN as the well layers;RSC Advances;2015
5. A Band-Gap Energy Model of the Quaternary Alloy In x Ga y Al 1− x − y N using Modified Simplified Coherent Potential Approximation;Chinese Physics Letters;2013-07
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