Compositional inhomogeneity of a high-efficiency InxGa1−xN based multiple quantum well ultraviolet emitter studied by three dimensional atom probe-Reference-Cited by-同舟云学术

Compositional inhomogeneity of a high-efficiency InxGa1−xN based multiple quantum well ultraviolet emitter studied by three dimensional atom probe

Published:2008-01-28 Issue:4 Volume:92 Page:041904
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Galtrey M. J.,Oliver R. A.,Kappers M. J.,McAleese C.,Zhu D.,Humphreys C. J.,Clifton P. H.,Larson D.,Cerezo A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2829592

Reference10 articles.

1. High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380nm

2. Optical and microstructural studies of InGaN∕GaN single-quantum-well structures

3. Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering

4. M. K. Miller, A. Cerezo, M. G. Hetherington, and G. D. W. Smith, Atom Probe Field-ion Microscopy (Oxford University Press, Oxford, 1996), Chap. 1, pp. 1–39.

5. Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures

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