InGaN Quantum Dots Studied by Correlative Microscopy Techniques for Enhanced Light-Emitting Diodes
Author:
Affiliation:
1. Univ. Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France
2. UNIROUEN, CNRS, Groupe de Physique des Matériaux, Normandie Université, 76000 Rouen, France
3. Univ. Grenoble-Alpes, CEA, IRIG-PHELIQS, 38000 Grenoble, France
Funder
Region Normandie
European Regional Development Fund (ERDF)
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsanm.0c02106
Reference61 articles.
1. Band parameters for nitrogen-containing semiconductors
2. Size effects in band gap bowing in nitride semiconducting alloys
3. Systematic experimental and theoretical investigation of intersubband absorption inGaN∕AlNquantum wells
4. InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements
5. The Blue Laser Diode
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