Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures-Reference-Cited by-同舟云学术

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Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures

Published:2007-01 Issue: Volume:298 Page:504-507
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Zhu D.,Kappers M.J.,McAleese C.,Graham D.M.,Chabrol G.R.,Hylton N.P.,Dawson P.,Thrush E.J.,Humphreys C.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

3. High dislocation densities in high efficiency GaN‐based light‐emitting diodes

4. High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of lattice-modulated AlInGaN as a barrier layer in near-ultraviolet light-emitting diodes by numerical analysis and fabrication;Japanese Journal of Applied Physics;2014-04-07

2. Light Improvement of Near Ultraviolet Light-Emitting Diodes by Utilizing Lattice-Matched InAlGaN as Barrier Layers in Active Region;Japanese Journal of Applied Physics;2013-08-01

3. Light Emitting and Laser Diodes in the Ultraviolet;IEEE Journal of Selected Topics in Quantum Electronics;2011-09

4. X-ray diffraction of III-nitrides;Reports on Progress in Physics;2009-02-20

5. Growth and characterization of the AlInGaN quaternary protective layer to suppress the thermal damage of InGaN multiple quantum wells;Journal of Crystal Growth;2008-08

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