Investigation of lattice-modulated AlInGaN as a barrier layer in near-ultraviolet light-emitting diodes by numerical analysis and fabrication
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference19 articles.
1. 222-282 nm AlGaN and InAlGaN based deep-UV LEDs fabricated on high-quality AlN template
2. Room-temperature intense 320 nm band ultraviolet emission from quaternary InAlGaN-based multiple-quantum wells
3. Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures
4. High-quality p–n junctions with quaternary AlInGaN/InGaN quantum wells
5. A comparative study of near-UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of pulsed Al injection on InGaN/GaN multi-quantum well structures grown by MOCVD;Semiconductor Science and Technology;2021-07-23
2. Effects of ultraviolet-assisted electrochemical etching current densities on structural and optical characteristics of porous quaternary AlInGaN alloys;Arabian Journal of Chemistry;2019-12
3. Porous Quaternary Al0.1In0.1Ga0.8N Film Formation via Photoelectrochemical Etching in HF:C2H5OH Electrolyte;Journal of the American Ceramic Society;2016-04-15
4. Alteration of structural and optical properties in quaternary Al0.1In0.1Ga0.8N films using ultraviolet assisted photo-electrochemical etching route;Journal of Alloys and Compounds;2015-11
5. Electron transport through cubic InGaN/AlGaN resonant tunneling diodes;Computer Physics Communications;2014-12
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