Homoepitaxial growth of GaN using molecular beam epitaxy-Reference-Cited by-同舟云学术

Homoepitaxial growth of GaN using molecular beam epitaxy

Published:1996-08-15 Issue:4 Volume:80 Page:2195-2198
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Gassmann A.,Suski T.,Newman N.,Kisielowski C.,Jones E.,Weber E. R.,Liliental‐Weber Z.,Rubin M. D.,Helava H. I.,Grzegory I.,Bockowski M.,Jun J.,Porowski S.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.363112

Reference9 articles.

1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

2. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

3. GaN Growth Using GaN Buffer Layer

4. GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high‐temperature monocrystalline AlN buffer layers

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