Growth behaviour of bulk GaN single crystals grown with various flux ratios using solvent-thermal method

Author:

Shin T. I.,Yoon D. H.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Characterization of Crystals;Introduction to Crystal Growth and Characterization;2014-08-01

2. Photoluminescence of Flux Grown GaN Crystals;Journal of Nanoelectronics and Optoelectronics;2013-03-01

3. TEM study of c-plane GaN layers grown on γ-LiAlO2(100);physica status solidi (c);2008-12

4. GaN substrates by HVPE;Light-Emitting Diodes: Research, Manufacturing, and Applications XII;2008-02-07

5. Thick GaN layers on sapphire with various buffer layers;Crystal Research and Technology;2007-12

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