Resonant photoluminescence excitation in GaAs grown directly on Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100134
Reference20 articles.
1. Photoluminescence and x‐ray properties of heteroepitaxial gallium arsenide on silicon
2. Photoluminescence and x‐ray properties of heteroepitaxial gallium arsenide on silicon
3. Photoluminescence and photoluminescence excitation spectra of GaAs grown directly on Si
4. Biaxially stressed excitons in GaAs/AlGaAs quantum wells grown on Si substrates
5. Improvements in the heteroepitaxy of GaAs on Si
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photoreflectance study of gallium arsenide grown on Si;Applied Physics Letters;1990-10-22
2. Biaxial and uniaxial stress in gallium arsenide on silicon: A linear polarized photoluminescence study;Journal of Applied Physics;1990-07
3. Elimination of thermally induced biaxial stress in GaAs on Si layers by post‐growth patterning;Journal of Applied Physics;1989-08
4. Band-edge excitons in gallium arsenide on silicon;Physical Review B;1989-07-15
5. Photoluminescence and photoluminescence excitation spectroscopy in a magnetic field for GaAs grown on a Si substrate;Journal of Applied Physics;1989-06
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