Photoluminescence and x‐ray properties of heteroepitaxial gallium arsenide on silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336353
Reference14 articles.
1. Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy
2. Summary Abstract: Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si(100) and Ge(100)
3. Molecular beam epitaxy of GaAs and AlGaAs on Si
4. The effect of elastic strain on energy band gap and lattice parameter in III‐V compounds
5. An evaluation of the thermal and elastic constants affecting GaAs crystal growth
Cited by 41 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Improvement of the crystallinity of a GaAs epitaxial film grown on a Si substrate using a Si/SiGe/Ge buffer layer;Thin Solid Films;1996-06
2. Improvement of the crystallinity of GaAs epitaxial layers grown on Si substrates assisted by electron beam irradiation;Thin Solid Films;1996-06
3. Photoluminescence studies on GaAs/Ge/Si and GaAs/SiGe/Ge/Si heterostructures after annealing and hydrogenation;Physica Status Solidi (a);1993-10-16
4. Photoluminescence of GaAs epitaxial layers on Si with growth assisted by electron‐beam irradiation;Journal of Applied Physics;1993-09-15
5. MOVPE growth of (Al)GaAs on GaAs and Si for photovoltaic applications;Microelectronic Engineering;1992-05
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3