Representation of GaP formation by a reduced order surface kinetics model using p-polarized reflectance measurements
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370783
Reference17 articles.
1. Optical approaches for controlling epitaxial growth
2. Real-Time Monitoring of Epitaxial Processes by Parallel-Polarized Reflectance Spectroscopy
3. P-polarized reflectance spectroscopy: A highly sensitive real-time monitoring technique to study surface kinetics under steady state epitaxial deposition conditions
4. Real-time monitoring of surface processes by p-polarized reflectance
5. Real-time optical characterization of GaP heterostructures by p-polarized reflectance
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1. An SDRE-Based Approach for HIV Feedback Control and Control of Thin Film Growth in a CVD Reactor;IFAC Proceedings Volumes;2011-01
2. Material Surface Design to Counter Electromagnetic Interrogation of Targets;SIAM Journal on Applied Mathematics;2006-01
3. Reduced Order Modeling and Control of Thin Film Growth in an HPCVD Reactor;SIAM Journal on Applied Mathematics;2002-01
4. Surface reaction kinetics of Ga1−xInxP growth during pulsed chemical beam epitaxy;Applied Surface Science;2001-07
5. Vapor Phase Epitaxy, Real-time Process Monitoring by P-Polarized Reflectance Spectroscopy and Closed-loop Control of;Encyclopedia of Materials: Science and Technology;2001
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