P-polarized reflectance spectroscopy: A highly sensitive real-time monitoring technique to study surface kinetics under steady state epitaxial deposition conditions-Reference-Cited by-同舟云学术

P-polarized reflectance spectroscopy: A highly sensitive real-time monitoring technique to study surface kinetics under steady state epitaxial deposition conditions

Published:1996-02 Issue:2 Volume:47 Page:133-140
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Dietz N,Bachmann KJ

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference22 articles.

1. Monitoring real-time CBE growth of GaAs and AlGaAs using dynamic optical reflectivity

2. In situ spectral reflectance monitoring of III-V epitaxy

3. In-situ control of Ga(A1)As MBE layers by pyrometric interferometry

4. In SituMonitoring of Optical Reflectance Oscillation in Layer-by-Layer Chemical Vapor Deposition of Oxide Superconductor Films

5. In-situ monitoring of GaAs growth process in MOVPE by surface photo-absorption method

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