Variation in the effective Richardson constant of a metal‐silicon contact due to metal‐film thickness
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340966
Reference11 articles.
1. Room‐temperature interfacial reaction in Au‐semiconductor systems
2. Variation of the effective Richardson constant of Pt‐Si Schottky diode due to annealing treatment
3. Electrical properties of Au‐Cu‐doped Si Schottky diode
4. Stress effect in Au‐Si Schottky diode doped with Cu
5. Attenuation Length Measurements of Hot Electrons in Metal Films
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