Effects of tensile stress induced by silicon nitride passivation on electrical characteristics of AlGaN∕GaN heterostructure field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1906328
Reference15 articles.
1. A comparative study of surface passivation on AlGaN/GaN HEMTs
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3. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
4. Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density
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