Investigation on interface charges in SiN/AlxGa1−xN/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors-Reference-Cited by-同舟云学术

Investigation on interface charges in SiN/AlxGa1−xN/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors

Published:2021-09-14 Issue:10 Volume:130 Page:105704
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Rrustemi Bledion¹²^ORCID,Jaud Marie-Anne¹,Triozon François¹^ORCID,Piotrowicz Clémentine¹,Vandendaele William¹,Leroux Charles¹^ORCID,Le Royer Cyrille¹,Biscarrat Jérôme¹,Ghibaudo Gérard²^ORCID

Affiliation:

1. University Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France

2. University Grenoble Alpes, IMEP-LAHC MINATEC, CS 50257 Grenoble, France

Funder

IRTNanoelec

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0058019

Reference41 articles.

1. Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

2. The 2018 GaN power electronics roadmap

3. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

4. Nonlinear macroscopic polarization in III-V nitride alloys

5. Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures

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