Shallow Si donor in ion-implanted homoepitaxial AlN-Reference-Cited by-同舟云学术

Shallow Si donor in ion-implanted homoepitaxial AlN

Published:2020-04-27 Issue:17 Volume:116 Page:172103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hayden Breckenridge M.¹^ORCID,Guo Qiang¹^ORCID,Klump Andrew¹^ORCID,Sarkar Biplab¹^ORCID,Guan Yan¹,Tweedie James²,Kirste Ronny²,Mita Seiji²,Reddy Pramod²^ORCID,Collazo Ramón¹,Sitar Zlatko¹^ORCID

Affiliation:

1. Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA

2. Adroit Materials, 2054 Kildaire Farm Road, Cary, North Carolina 27518, USA

Funder

National Science Foundation

Air Force Office of Scientific Research

Army Research Office

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5144080

Reference40 articles.

1. Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN films

2. Temperature Dependence of Band Gap Change in InN and AlN

3. Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy

4. Schottky contact formation on polar and non-polar AlN

5. Ni/Au Schottky diodes on AlxGa1-xN (0.7

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Switching figure-of-merit, optimal design, and power loss limit of (ultra-) wide bandgap power devices: A perspective;Applied Physics Letters;2024-09-09

2. Preparation and Deep-UV Solar-Blind Photovoltaic Performance of AlYN-Based MSM Detector;IEEE Sensors Journal;2024-08-15

3. Dry and wet etching of single-crystal AlN;Journal of Vacuum Science & Technology A;2024-07-09

4. Dopants and defects in ultra-wide bandgap semiconductors;Current Opinion in Solid State and Materials Science;2024-06

5. Deep‐Ultraviolet Luminescence Properties of AlN;physica status solidi (RRL) – Rapid Research Letters;2024-03-17