Investigation of the kinetic mechanism for the ion‐assisted etching of GaAs in Cl2using a modulated ion beam
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336241
Reference25 articles.
1. Submicrometer gate fabrication of GaAs MESFET by plasma etching
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1. Development of chemically assisted etching method for GaAs-based optoelectronic devices;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2005-03
2. Chemically assisted ion beam etching of GaAs by argon and chlorine gases: Experimental and simulation investigations;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005
3. Generation of a pulsed ion beam with a tuned electronic beam switch;Plasma Sources Science and Technology;2003-07-17
4. Inductively coupled plasma etching in ICl- and IBr-based chemistries. Part II: InP, InSb, InGaP, and InGaAs;Plasma Chemistry and Plasma Processing;2000
5. Characteristics of inductively coupled Cl2/BCl3 plasmas during GaN etching;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-07
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