Modes and the alpha-gamma transition in rf capacitive discharges in N2O at different rf frequencies
Author:
Publisher
AIP Publishing
Subject
Condensed Matter Physics
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2364135
Reference30 articles.
1. Nitrogen‐atom incorporation at Si–SiO2 interfaces by a low‐temperature (300 °C), pre‐deposition, remote‐plasma oxidation using N2O
2. Nitrogen Incorporation in Thin Silicon Oxides in a N 2 O Plasma: Effects of Processing Conditions
3. Optical, vibrational and compositional study of amorphous silicon oxynitride thin films grown by an RF plasma using N2O + SiH4 gas mixtures
4. In situ real-time ellipsometric study of the growth of r.f. plasma deposited amorphous hydrogenated silicon oxynitride thin films
5. Chemical and morphological properties of amorphous silicon oxynitride films deposited by plasma enhanced chemical vapor deposition
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