Thermoreflectance microscopy applied to the study of electrostatic discharge degradation in metal-oxide-semiconductor field-effect transistors-Reference-Cited by-同舟云学术

Thermoreflectance microscopy applied to the study of electrostatic discharge degradation in metal-oxide-semiconductor field-effect transistors

Published:2005-05-15 Issue:10 Volume:97 Page:104510
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

de Freitas L. R.,da Silva E. C.,Mansanares A. M.,Pimentel M. B. C.,Eleutério Filho S.,Batista J. A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1904727

Reference14 articles.

1. Melt filaments in n+pn+ lateral bipolar ESD protection devices

2. Linewidth control effects on MOSFET ESD robustness

3. A. M. Mansanares, in Semiconductors and Electronic Materials, Progress in Photothermal and Photoacoustic Science and Technology Series Vol. IV, edited by A. Mandelis and P. Hess (SPIE Optical Engineering Press, Bellingham, Washington, USA, 2000), Chap. 3, pp. 75–110.

4. Micro-Temperature Measurements on Semiconductor Laser Mirrors by Reflectance Modulation: A Newly Developed Technique for Laser Characterization

5. Temperature measurements of telecommunication lasers on a micrometre scale

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