High resolution scanning photoluminescence characterization of semi‐insulating GaAs using a laser scanning microscope
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97230
Reference14 articles.
1. Direct observation of dislocation effects on threshold voltage of a GaAs field‐effect transistor
2. Cathodoluminescence scanning electron microscopy of semiconductors
3. Photoluminescence at dislocations in GaAs and InP
4. Spatially resolved photoluminescence characterization and optically induced degradation of In1−xGaxAsyP1−yDH laser material
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1. Chapter 8 Deep Level Defects in Epitaxial III/V Materials;Imperfections in III/V Materials;1993
2. Scanned photoluminescence with high spatial resolution in semi-insulating GaAs and InP:aspects of surface passivation and photodegradation;Semiconductor Science and Technology;1992-01-01
3. DLDS-related near-bandgap photoluminescence peak in current degraded GaAlAs LEDS;Semiconductor Science and Technology;1991-08-01
4. A low-temperature, whole-wafer-imaging system for defect and impurity mapping;Canadian Journal of Physics;1991-03-01
5. Laser spot scanning in photoelectrochemical systems, relation between spot size and spatial resolution of the photocurrent;Journal of Applied Physics;1991-02-15
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