DLDS-related near-bandgap photoluminescence peak in current degraded GaAlAs LEDS
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/6/i=8/a=017/pdf
Reference38 articles.
1. X‐ray topographic observation of dark‐line defects in GaAs‐Ga1−xAlxAs double‐heterostructure wafers
2. Nature and origin of dark defects in GaAs LED's
3. Defect structure of degraded Ga1−xAlxAs double‐heterostructure light‐emitting diodes
4. Photoluminescence at Dislocations in GaAs
5. Spatially resolved electrical and spectroscopic studies around dislocations in GaAs single crystals
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of a grain boundary on the photoluminescence spectrum of silicon: expansion of electron-hole droplet cloud;Journal of Physics: Condensed Matter;1995-07-24
2. Spatially resolved photoluminescence and electron-beam-induced current studies of a coincidence silicon bicrystal;Materials Science and Engineering: B;1994-05
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