Theory of strain states in InAs quantum dots and dependence on their capping layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2041846
Reference34 articles.
1. Self-Formed $\bf In_{0.5}Ga_{0.5}As$ Quantum Dots on GaAs Substrates Emitting at $\bf 1.3\,{\mbi {\mu}}m$
2. 1.3 μm photoluminescence from InGaAs quantum dots on GaAs
3. Suppression of temperature sensitivity of interband emission energy in 1.3-μm-region by an InGaAs overgrowth on self-assembled InGaAs/GaAs quantum dots
4. Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 μm emission
5. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates
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1. Modelling the effects of p-modulation doping in InAs/InGaAs quantum dot devices;Optical and Quantum Electronics;2024-02-18
2. Evaluation of different capping strategies in the InAs/GaAs QD system: Composition, size and QD density features;Applied Surface Science;2021-01
3. Lateral carrier transfer for high density InGaAs/GaAs surface quantum dots;Journal of Luminescence;2020-02
4. Enhancement of optical gain in quantum dot ensemble with electric field;Superlattices and Microstructures;2019-01
5. Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition;Beilstein Journal of Nanotechnology;2018-11-02
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