Fermi-level effects in semiconductor processing: A modeling scheme for atomistic kinetic Monte Carlo simulators
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2041847
Reference25 articles.
1. Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena
2. Atomistic Simulations in Materials Processing
3. Proceedings of the 2001 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);Hane M.,2001
4. Ion implant simulations: Kinetic Monte Carlo annealing assessment of the dominant features
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