Role of 0.66 eV dominant trap in annealed low-temperature grown molecular beam epitaxial GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366844
Reference16 articles.
1. Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a denseEL2-like band
2. Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy
3. Donor and acceptor concentrations in molecular beam epitaxial GaAs grown at 300 and 400 °C
4. Deep Level and Conduction Mechanism in Low-Temperature GaAs Grown by Molecular Beam Epitaxy
5. Trap signatures of As precipitates and As‐antisite‐related defects in GaAs epilayers grown by molecular beam epitaxy at low temperatures
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