Deep Level and Conduction Mechanism in Low-Temperature GaAs Grown by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Deep Level and Conduction Mechanism in Low-Temperature GaAs Grown by Molecular Beam Epitaxy

Published:1996-02-28 Issue:Part 1, No. 2B Volume:35 Page:1159-1164
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shiobara Syunsuke,Hashizume Tamotsu,Hasegawa Hideki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of dislocation-related and point-defects in III-As layers by extensive DLTS study;Nanoscale and Quantum Materials: From Synthesis and Laser Processing to Applications 2022;2022-03-04

2. Identification of dislocation-related and point-defects in III-As layers for silicon photonics applications;Journal of Physics D: Applied Physics;2021-05-04

3. Growth and Characterization of Fullerene/GaAs Interfaces and C 60 -Doped GaAs and AlGaAs Layers;Molecular Beam Epitaxy;2018

4. Growth and characterisation of fullerene/GaAs interfaces and C60-doped GaAs and AlGaAs layers;Molecular Beam Epitaxy;2013

5. Localized States in GaAsBi and GaAs/GaAsBi Heterostructures;Bismuth-Containing Compounds;2013

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