Localized States in GaAsBi and GaAs/GaAsBi Heterostructures
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Publisher
Springer New York
Link
http://link.springer.com/content/pdf/10.1007/978-1-4614-8121-8_9
Reference65 articles.
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3. Francoeur, S., Seong, M.-J., Mascarenhas, A., Tixier, S., Adamcyk, M., Tiedje, T.: Band gap of GaAs1−x Bi x , 0
4. Huang, W., Oe, K., Feng, G., Yoshimoto, M.: Molecular-beam epitaxy and characteristics of GaN y As1−x−y Bi x . J. Appl. Phys. 98, 053505 (2005)
5. Tixier, S., Webster, S.E., Young, E.C., Tiedje, T., Francoeur, S., Mascarenhas, A., Wei, P., Schiettekatte, F.: Band gaps of the dilute quaternary alloys GaN x As1−x−y Bi y and Ga1−y In y N x As1−x . Appl. Phys. Lett. 86, 112113 (2005)
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