Characterization of Femtosecond Low-Temperature-Grown GaAs Photoconductive Switch
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference10 articles.
1. Optoelectronic transient characterization of ultrafast devices
2. Photoconductivity investigation of the electron dynamics in GaAs grown at low temperature
3. Increase in response time of low-temperature-grown GaAs photoconductive switches at high voltage bias
4. Interpretation of photocurrent correlation measurements used for ultrafast photoconductive switch characterization
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1. Bibliography;Nanoscale Microwave Engineering;2014-03-06
2. Response characteristic of femtosecond LT-GaAs photoconductive switches at different voltage biases;Journal of Physics D: Applied Physics;2009-11-30
3. Time-Resolved Terahertz Spectroscopy with Free-Space Electro-Optic Sampling;Chinese Physics Letters;2004-10-27
4. Response characteristic of femtosecond LT-GaAs photoconductive switches at different voltage bias;Acta Physica Sinica;2004
5. Coherent Excitonic Wavepackets in Two-Dimensional Square Dot Arrays Driven by an In-Plane Uniform Electric Field;Chinese Physics Letters;2004-01
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