Staircase band gap Si1−xGex/Si photodetectors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1286958
Reference5 articles.
1. Normal‐incidence strained‐layer superlattice Ge0.5Si0.5/Si photodiodes near 1.3 μm
2. Normal‐incidence epitaxial SiGeC photodetector near 1.3 μm wavelength grown on Si substrate
3. High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers
4. 1.3 μm photoresponsivity in Si-based Ge1−xCx photodiodes
5. Staircase solid-state photomultipliers and avalanche photodiodes with enhanced ionization rates ratio
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1. Metastable Ge1–xCx Alloy Nanowires;ACS Applied Materials & Interfaces;2012-01-17
2. Composition Controlled Synthesis and Raman Analysis of Ge-Rich SixGe1–x Nanowires;Journal of Nanoscience and Nanotechnology;2008-06-01
3. Fabrication of a nanoelectromechanical switch using a suspended carbon nanotube;Applied Physics Letters;2005-02-21
4. Suspended Multiwalled Carbon Nanotubes as Self-aligned Evaporation Masks;Journal of Nanoscience and Nanotechnology;2003-08-01
5. Theoretical analysis of Si1−x−yGexCy near-infrared photodetectors;Optical Engineering;2003-07-01
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