Metastable Ge1–xCx Alloy Nanowires
Author:
Affiliation:
1. Skku Advanced Institute of Nanotechnology, School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea
2. Samsung Advanced Institute of Technology, Yongin, 449-712, Korea.
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/am201446u
Reference59 articles.
1. Enhanced Thermoelectric Figure-of-Merit in Nanostructured p-type Silicon Germanium Bulk Alloys
2. Staircase band gap Si1−xGex/Si photodetectors
3. First-principles study of stability, band structure, and optical properties of the ordered Ge0.50Sn0.50 alloy
4. Extended x-ray-absorption fine-structure investigation of short-range order ina-Ge1−xSnxalloys
5. New Materials for Si-Based Heterostructure Engineering: Synthesis of Si-Ge-C Alloys and Compounds by UHV-CVD and Molecular Chemistry
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3. Recent advances in the growth of germanium nanowires: synthesis, growth dynamics and morphology control;J. Mater. Chem. C;2014
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