First-principles study of stability, band structure, and optical properties of the ordered Ge0.50Sn0.50 alloy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125558
Reference22 articles.
1. Silicon‐based group IV heterostructures for optoelectronic applications
2. Direct-gap Ge/GeSn/Si and GeSn/Ge/Si heterostructures
3. Predicted band gap of the new semiconductor SiGeSn
4. Formation of Self-Assembled Quantum Wires during Epitaxial Growth of Strained GeSn Alloys on Ge(100): Trench Excavation by Migrating Sn Islands
5. Angle-resolved photoemission study of thin molecular-beam-epitaxy-grownα-Sn1−xGexfilms withx∼0.5
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