Theoretical analysis of Si1−x−yGexCy near-infrared photodetectors
Author:
Publisher
SPIE-Intl Soc Optical Eng
Subject
General Engineering,Atomic and Molecular Physics, and Optics
Reference28 articles.
1. GexSi1−xstrained‐layer superlattice waveguide photodetectors operating near 1.3 μm
2. Avalanche gain in GexSi1-x/Si infrared waveguide detectors
3. Photoresponse model for Si/sub 1/spl minus/x/Ge/sub x//Si heterojunction internal photoemission infrared detector
4. Medium‐wavelength, normal‐incidence, p‐type Si/SiGe quantum well infrared photodetector with background limited performance up to 85 K
5. Long‐wavelength SiGe/Si resonant cavity infrared detector using a bonded silicon‐on‐oxide reflector
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1. Optoelectronic properties of semiconductor nanowires;Semiconductor Nanowires;2015
2. Effect of Ge Composition on Infrared Detecting Performance of Strain Si/${\rm Si}_{1-{\rm x}-{\rm y}}{\rm Ge}_{\rm x} {\rm C} _{\rm y}$ Heterojunction on Preferentially Etched Silicon Substrate;IEEE Sensors Journal;2010-08
3. Ge/Si photodetectors and group IV alloy based photodetector materials;Optical and Quantum Electronics;2009-05
4. On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications;Optical and Quantum Electronics;2009-05
5. Estimation of external quantum efficiency of Ge rich Si1-x-yGexCy on Si photodetectors at 1.3 μm;2007 International Workshop on Physics of Semiconductor Devices;2007-12
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