Annealing effects on the conduction mechanisms of p+-amorphous- Si0.8C0.2:H/n-crystalline-Si diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1591073
Reference17 articles.
1. Double‐Layer μc ‐ Si / a ‐ SiC x Emitter in a Silicon Heterojunction Bipolar Transistor with a Cutoff Frequency of 47 GHz
2. Photocarrier collection in a-SiC:H/c-Si heterojunction solar cells
3. Microcrystallization formation in silicon carbide thin films
4. In situ-doped amorphous Si/sub 0.8/C/sub 0.2/ emitter bipolar transistors
5. Preparation and Electrical Properties of An Amorphous SiC/Crystalline Si P+n Heterostructure
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