Microcrystallization formation in silicon carbide thin films-Reference-Cited by-同舟云学术

Microcrystallization formation in silicon carbide thin films

Published:1992-07 Issue:1 Volume:66 Page:135-146
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Demichelis F.¹,Pirri C. F.¹,Tresso E.¹

Affiliation:

1. a Dipartimento di Fisica del Politecnico di Torino , C.so Duca degli Abruzzi 24, Torino , Italy

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642819208221301

Reference21 articles.

1. Raman scattering in pure and hydrogenated amorphous germanium and silicon

2. Infrared absorption of hydrogenated amorphous SiC and GeC films

3. Carbone , A. Demichelis , F. and Kaniadakis , G. 1990.Proceedings of the Fifth International Photovoltaic Science and Engineering Conference, 841Japan: Showado Insatsu K.K.

4. Annealing temperature dependence of the optical properties of sputtered hydrogenated amorphous silicon carbide

5. New approach to optical analysis of absorbing thin solid films

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