Reducing threshold voltage shifts in amorphous silicon thin film transistors by hydrogenating the gate nitride prior to amorphous silicon deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120435
Reference20 articles.
1. Amorphous silicon diodes and TFTs for active matrix flat panel display applications
2. Fast and slow states at the interface of amorphous silicon and silicon nitride
3. Creation of near-interface defects in hydrogenated amorphous silicon-silicon nitride heterojunctions: The role of hydrogen
4. Influence of ana‐SiNx:H gate insulator on an amorphous silicon thin‐film transistor
5. Gate dielectric and contact effects in hydrogenated amorphous silicon‐silicon nitride thin‐film transistors
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