Influence of ana‐SiNx:H gate insulator on an amorphous silicon thin‐film transistor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339508
Reference12 articles.
1. Self-alignment processed amorphous silicon ring oscillators
2. Effect ofa‐SiNx:H composition on band bending near the interface ofa‐Si:H/a‐SiNx:H layered structures
3. Influence of a-SiNx: H composition on transfer-doping and electron-trapping effects in a-SiNx: H/a-Si: H superlattices
4. Charge trapping instabilities in amorphous silicon‐silicon nitride thin‐film transistors
5. Conduction in non-crystalline systems V. Conductivity, optical absorption and photoconductivity in amorphous semiconductors
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