Fast and slow states at the interface of amorphous silicon and silicon nitride
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96851
Reference6 articles.
1. Electronic states at the hydrogenated amorphous silicon/silcon nitride interface
2. Charge trapping instabilities in amorphous silicon‐silicon nitride thin‐film transistors
3. Deep-level distributions in hydrogenated amorphous silicon
4. The electrical characterization of surfaces, interfaces and contacts to a-Si:H
5. Adsorbate effects on the electrical conductance of a-Si: H
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