Advanced hydrogenation process applied on Ge on Si quantum dots for enhanced light emission-Reference-Cited by-同舟云学术

Advanced hydrogenation process applied on Ge on Si quantum dots for enhanced light emission

Published:2021-02-22 Issue:8 Volume:118 Page:083104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Spindlberger Lukas¹^ORCID,Kim Moonyong²^ORCID,Aberl Johannes¹,Fromherz Thomas¹^ORCID,Schäffler Friedrich¹,Fournel Frank³,Hartmann Jean-Michel³,Hallam Brett²^ORCID,Brehm Moritz¹^ORCID

Affiliation:

1. Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Strasse 69, 4040 Linz, Austria

2. School of Photovoltaic and Renewable Energy Engineering, The University of New South Wales, Kensington, NSW 2052, Australia

3. Université Grenoble Alpes, CEA, LETI, 38054 Grenoble, France

Funder

Austrian Science Fund

Linz Institute of Technology

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0036039

Reference37 articles.

1. Passivation and depassivation of silicon dangling bonds at the Si/SiO2interface by atomic hydrogen

2. High-Performance and Traditional Multicrystalline Silicon: Comparing Gettering Responses and Lifetime-Limiting Defects

3. Impact of dislocations and dangling bond defects on the electrical performance of crystalline silicon thin films

4. Influence of crystalline defects in Czochralski-grown Si multicrystal on minority carrier lifetime

5. Advanced Hydrogenation of Dislocation Clusters and Boron-oxygen Defects in Silicon Solar Cells

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