Impact of dislocations and dangling bond defects on the electrical performance of crystalline silicon thin films-Reference-Cited by-同舟云学术

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Impact of dislocations and dangling bond defects on the electrical performance of crystalline silicon thin films

Published:2014-07-14 Issue:2 Volume:105 Page:022108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Steffens S.¹,Becker C.¹,Amkreutz D.¹,Klossek A.²,Kittler M.²³,Chen Y.-Y.¹⁴,Schnegg A.¹,Klingsporn M.³,Abou-Ras D.¹,Lips K.¹,Rech B.¹

Affiliation:

1. Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin, Germany

2. Brandenburgische Technische Universität, Cottbus, Germany

3. IHP Microelectronics, Frankfurt (Oder), Germany

4. Green Energy and Environment Research Labs, Industrial Technology Research Institute, Hsinchu, Taiwan

Funder

European Commission (EC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4890625

Reference50 articles.

1. Crystalline silicon on glass (CSG) thin-film solar cell modules

2. Progress in Laser-Crystallized Thin-Film Polycrystalline Silicon Solar Cells: Intermediate Layers, Light Trapping, and Metallization

3. Towards wafer quality crystalline silicon thin-film solar cells on glass

4. Polycrystalline silicon thin-film solar cells: Status and perspectives

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