Characterization of very fast states in the vicinity of the conduction band edge at the SiO2/SiC interface by low temperature conductance measurements
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4858435
Reference21 articles.
1. Status and prospects for SiC power MOSFETs
2. 10 A, 2.4 kV Power DiMOSFETs in 4H-SiC
3. Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing
4. Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
5. Enhanced channel mobility of 4H–SiC metal–oxide–semiconductor transistors fabricated with standard polycrystalline silicon technology and gate-oxide nitridation
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